- News
27 June 2014
EPC’s eGaN power transistors receive EDN China Innovation Award for Leading Technology
At a ceremony in Shanghai, Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has been recognized with an EDN China 10th Anniversary Innovation Award for Leading Technology in the category ‘Most Influential Technology for the Future’.
The EDN China Innovation Award recognizes technology, product and company innovation. The winners were selected through online voting of electronics design engineers and managers worldwide (40%), expert judging (30%) and editor evaluation (30%).
“Power designers appreciate the fast switching speed, high efficiency, small size, and competitive cost of the enhancement-mode GaN transistor – attributes that will lead to continued displacement of the silicon MOSFET,” says EPC’s CEO Alex Lidow.
The EDN China Innovation Award 2014 received 128 product nominations in nine major categories from over 70 companies worldwide.
©2006-2020
Juno Publishing and Media Solutions Ltd. All rights reserved. Semiconductor
Today and the editorial material contained within it and related media is
the copyright of Juno Publishing and Media Solutions Ltd. Reproduction in
whole or part without permission from Juno Publishing and Media Solutions
Ltd is forbidden. In most cases, permission will be granted, if the magazine
and publisher are acknowledged.