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27 May 2014

EPC holds webinar on GaN transistors for wireless power transfer systems

On 4 June (10:30-11:30am EDT), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, is conducting the free one-hour webinar ‘GaN Transistors – Crushing Silicon in Wireless Energy Transfer’, sponsored by the Institute of Electrical and Electronics Engineers (IEEE) Power Electronics Society (PELS).

In the webinar, eGaN FETs are compared with MOSFETs in highly resonant wireless energy transfer using class-E and a novel high-efficiency voltage-mode class-D topology. Performance comparisons will be based on efficiency and sensitivity to load and coil coupling variations. Each of the topologies has been experimentally tested using the same source and device coil set with the same device rectifier. The experimental units operate with loosely coupled coils at 6.78MHz (ISM band) and deliver between 15W and 30W.

The presenters Alex Lidow (CEO & co-founder) and Michael de Rooij (executive director of Applications Engineering) are the featured speakers. Both are widely published, including being co-authors of ‘GaN Transistors for Efficient Power Conversion’ (claimed to be the first textbook on the design and applications of gallium nitride transistors).

Tags: EPC E-mode GaN FETs

Visit: www.ieee-pels.org/mobile-news/2442-june

Visit: www.epc-co.com

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