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20 May 2014

GaN Systems launches 650V normally-off GaN transistor family

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has announced five new normally-off 650V GaN transistors optimized for high-speed system design. The GS66502P, GS66504P, GS66506P and GS66508P are, respectively, 8.5A/165mΩ, 17A/82mΩ, 25A/55mΩ and 34A/41mΩ parts, while the GS43106L is a 30A/60mΩ cascode.

The new 650V enhancement-mode parts feature a reverse current capability, zero reverse recovery charge and source-sense for optimal high-speed design. RoHS compliant, the devices are delivered in GaN Systems’ near-chipscale embedded GaNPX package, which eliminates wire bonds, thereby minimizing inductance. This package also optimizes thermal performance and is extremely compact, says GaN Systems.

“With these new 650V parts as well as our recently announced 100V family, GaN Systems offers a very wide range of parts which are available for are sampling now,” says president Girvan Patterson. Applications include high-speed DC-DC converters, resonant converters, AC motor drives, inverters, battery chargers, and switched mode power supplies.”

Tags: GaN Systems

Visit: www.gansystems.com

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