Temescal

ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

28 May 2014

Northrop Grumman samples E- and W-band InP HEMT LNAs for commercial as well as military applications

Northrop Grumman Corp of Redondo Beach, CA, USA has developed two high-performance monolithic microwave integrated circuit (MMIC) broadband ultra-low-noise amplifiers (LNAs) that are now in production (at its wafer fabrication facility in Manhattan Beach) for immediate delivery.

The indium phosphide (InP) high-electron-mobility transistor (HEMT) LNAs are for use in E-band and W-band commercial, civil and military applications such as communication links, sensors, millimeter-wave imaging, radars and digital microwave radios.

The ALP283 is a 1.7mm2 InP HEMT LNA that operates at 80-100GHz for W-band millimeter-wave imaging applications, sensors and communication links. The power amplifier provides 29dB of linear gain, 2.5dB typical noise figure, 1dB gain compression power (P1dB) of 3dBm (2mW), and a 2dB typical average noise figure from 80-100GHz.

The ALP275 is 2.125mm2 InP HEMT LNA that operates at 71-96GHz for E- and W-Band communications links. The power amplifier provides more than 26dB of linear gain, 3dB typical noise figure, and P1dB of 4dBm (2.5mW).

The compact die design of each LNA considerably reduces footprint size and exhibits ultra-low-noise performance and high gain, says the firm.

The LNAs are the initial release of products designed with the firm’s InP process, which has already been used in Northrop Grumman’s military communication systems. “For the first time, Northrop is offering products for similarly demanding commercial applications,” says Frank Kropschot, general manager, Microelectronics Products and Services.

To ensure rugged and reliable operation, both LNAs are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques.

See related items:

Northrop Grumman launches 71-76GHz and 81-86GHz GaAs E-band high-power MMICs

Tags: Northrop Grumman InP HEMT

Visit: www.as.northropgrumman.com/mps

Share/Save/Bookmark
See Latest IssueRSS Feed

EVG