ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


5 September 2014

Anvil transfers its 3C-SiC on silicon wafer production to Norstel

Anvil Semiconductors Ltd of Coventry, UK has secured a production source for its proprietary 3C-SiC on silicon epitaxial wafers through commercial silicon carbide (SiC) wafer and epitaxy supplier Norstel AB of Norrköping, Sweden.

Spun off from Finnish silicon wafer manufacturer Okmetic in 2005, Norstel manufactures n-type conductive and semi-insulating SiC substrates and single-crystal epitaxial layers deposited by chemical vapour deposition (CVD). As well as wafer epitaxy, Norstel also offers services for characterization and polishing of semiconductors used in power and high-frequency electronics.

Anvil was spun off in August 2010 from the University of Warwick’s School of Engineering by its technology commercialization subsidiary Warwick Ventures Ltd in order to exploit patented developments in SiC power semiconductor technology. The firm’s technology enables the growth of device-quality 3C-SiC epitaxy on 100mm silicon wafers to thicknesses that permit the fabrication of vertical power devices. The proprietary process is said to overcome mismatches in lattice parameter and thermal coefficient of expansion and can be migrated onto 150mm wafers and potentially beyond. The material has applications ranging from power devices and LEDs to medical devices and MEMS.

Anvil’s process for the growth of device-quality 3C-SiC epilayers on silicon wafers has been transferred onto production reactors at Norstel’s facilities. Layers grown using Anvil’s patented stress control techniques permit both 650V and 1200V devices to be realised.

Anvil is currently developing vertical Schottky barrier diodes (SBDs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) on its 3C-SiC on silicon wafers for supply and license to the multi-billion dollar power electronics market. The use of silicon substrates and epitaxial growth of cubic silicon carbide enables the fabrication of devices with the performance and efficiency benefits of SiC but at significantly lower material and manufacturing costs, a key target for the power electronics industry, says Anvil.

“Getting the process onto production equipment at Norstel underlines the capabilities of our technology,” says Anvil’s CEO Jill Shaw. “It opens the way for the use of multi-wafer reactors for our future production needs and a move to 150mm diameter wafers,” she adds.

“Our proven high-quality production expertise and capabilities in SiC epitaxy have helped Anvil to demonstrate the viability of their 3C-SiC solution,” comments Norstel’s chief commercial officer Ronald Vogel. “Norstel’s manufacturing capacity will pave the way for Anvil’s volume production,” he adds.

See related items:

Anvil awarded TSB grant to grow high-quality GaN on 3C-SiC on large-diameter silicon

Anvil gains £1m funding to commercialize low-cost SiC-in-silicon power devices

Warwick spins off Anvil to develop smaller, more efficient SiC-based power converters

Tags: SiC-on-Si substrates

Visit: www.anvil-semi.co.uk

Visit: www.norstel.com

See Latest IssueRSS Feed