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13 August 2015

EPC launches low-cost, high-power-density eGaN FET for high-frequency power conversion including wireless power transfer

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2039 high-power-density eGaN power transistor.

The EPC2039 is an extremely small 1.35mm x 1.35mm (1.82mm2) 80VDS, 6.8A power transistor with a maximum RDS(on) of 22mΩ with 5V applied to the gate. EPC says that the GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in a very small package. "It enables designers to increase the output power of their designs without increasing the space needed to do it," says Steve Colino, VP global sales & marketing.

The EPC2039 is designed primarily for high-frequency power conversion applications, such as synchronous rectification, Class-D audio, high-voltage buck converters, wireless charging, and pulsed power (LiDAR) applications. Emerging LiDAR applications include driverless vehicles and augmented reality.

Pricing for the EPC2039 power transistor is $0.78 each in 1000-unit quantities.

Tags: EPC E-mode GaN FETs

Visit: http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page

Visit: http://epc-co.com/epc/Products/eGaNFETs/EPC2039.aspx

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