29 January 2015

Brolis launches mid-IR gain chips for tunable spectroscopy at 1900-2500nm

Brolis Semiconductors Ltd of Vilnius, Lithuania has introduced ultra-broad gain and high-output-power single-angled-facet (SAF) gain chips for demanding tunable spectroscopy applications in the 1900-2500nm range.

Established by brothers Augustinas Vizbaras, Kristijonas Vizbaras and Dominykas Vizbaras in 2011, Brolis specializes in mid-infrared type-I gallium antimonide (GaSb) laser diodes and molecular beam epitaxy (MBE). Based on the proprietary technology, the new chips deliver >100nm/chip tunable single-mode emission with side-mode suppresion ratio (SMSR) of more than 25dB and CW output power of 5–20m. The output beam is strictly TE00 mode.

The new products are supplied in TO5 or C-mount packages. The output beam direction is normal to the package output plane.

Brolis is exhibiting in booth 4102 (North Hall D) at the SPIE Photonics West 2015 event in San Francisco, CA, USA (10-12 February).

See related items:

Brolis gains €1.6m more EU funding for R&D facilities expansion in 2014

President of Lithuania opens Brolis Semiconductors' MBE and laser diode production facility

Tags: Brolis MBE Epitaxial wafers Laser diodes

Visit: www.brolis-semicon.com