27 January 2015

Fujitsu begins mass production of Transphorm's GaN power devices

Transphorm Inc, Transphorm Japan Inc, and Fujitsu Semiconductor Ltd have announced that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of gallium nitride (GaN) power devices for switching applications. The large-scale, automotive-qualified facility, which is providing exclusive GaN foundry services for Transphorm Inc of Goleta, near Santa Barbara, CA, USA, should allow dramatic expansion of Transphorm's GaN power device business. The increased production aims to satisfy the increasing demand for GaN devices for the next generation of compact, energy-efficient power conversion systems.

Transphorm has established what is claimed to be the industry's only qualified 600V GaN device platform, backed by its GaN power IP portfolio. The first photovoltaic power conditioner products using the GaN module from Transphorm was launched in January. Other applications include ultra-small AC adapters, high-density power supplies for PCs, servers and telecom equipment, and highly efficient motion control systems.

In late 2013, Fujitsu Semiconductor and Transphorm announced the business integration of their GaN power device solutions. Since then, Transphorm's JEDEC-qualified process has been combined with Fujitsu Semiconductor's basic technology and ported to the CMOS-compatible, 150mm fab of Aizu Fujitsu Semiconductor Wafer Solution Ltd, involving key improvements for high-volume, silicon-compatible device manufacturing. Reckoning that a highly reliable manufacturing production line is an essential requirement for expanding business, the firms have finished the development in Aizu-Wakamatsu and now started mass production.

"The start of the mass production in a CMOS-compatible fab is a significant step forward toward achieving the widespread use of GaN power devices, as well as a demonstration of the successful integration of both companies' strengths," says Fujitsu Semiconductor's president Haruki Okada. "We will continue to enhance our high-quality manufacturing technology to support the stable supply of the products," he adds.

"Manufacturing Transphorm's GaN power devices at the Fujitsu Aizu-Wakamatsu facility will assure our customers a scalable, stable supply of products with the stamp of Fujitsu's proven, high-quality standard in mass manufacturing," says Transphorm's CEO Fumihide Esaka. "We will continue to expand our GaN power device portfolio with continued partnership with Fujitsu Semiconductor."

See related items:

Transphorm and Fujitsu to merge GaN power device businesses

Transphorm emerges from stealth mode prior to launching GaN power modules

Tags: Transphorm Fujitsu GaN HEMT GaN-on-Si

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