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9 June 2015

Soitec and SITRI collaborating on high-performance RF-SOI technology

Soitec of Bernin, near Grenoble, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers, and China's Shanghai Industrial µTechnology Research Institute (SITRI), which is developing and commercializing 'More than Moore' technologies for 'Internet of Things' applications, have signed a collaboration agreement focused on developing RF-SOI (silicon-on-insulator) technology using circuit designs based on Soitec's substrate materials and technologies.

The strategic partnership aims to enable both Soitec and SITRI to strengthen their place in high-growth wireless communications and the global market for radio-frequency applications, with a particular emphasis on the fast-developing Chinese RF ecosystem.

"Experience shows that Soitec's engineered substrates can optimize RF-SOI technology and applications in terms of both cost competitiveness and power efficiency," claims Soitec's chief technical officer Carlos Mazure. "This strategic partnership will enable us to push the limits of RF circuits and meet future connectivity needs,"he adds.

"Enhancing RF signal integrity is a key focus of the mobile communications industry as it builds toward 4G-LTE Advanced and 5G standards," says SITRI's president Dr Charles Yang. "We are excited to partner with Soitec in developing next-generation SOI communication solutions. It is consistent with SITRI's mission to create a collaborative R&D and commercialization environment to catalyze the growth of advanced technologies," he adds.

See related items:

Soitec launches second generation of eSI RF-SOI substrates, targeting LTE Advanced

Soitec seeing widespread adoption of eSI substrates

Tags: Soitec SOI engineered substrates

Visit: www.soitec.com

Visit: www.sitrigroup.com

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