Temescal

ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

9 March 2015

Cree exhibiting and presenting SiC-based technology at APEC

Cree Inc of Durham, NC, USA, which manufactures silicon carbide (SiC)-based power products - including SiC MOSFETs, Schottky diodes, and modules - is exhibiting and speaking at the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC (15-19 March), which focuses on the practical and applied aspects of the power electronics business. 

Exhibiting in booth #1417, Cree will have several onsite demonstrations designed to illustrate the broad range of power levels (60W) that SiC can support. Demos include a SiC-based LED power supply (<500W); a ZVS resonant converter targeted for telecom applications (1–10kW); a 25kW boost converter for solar applications that features a compact, new 31mm Cree module (10–25kW); and a power stack that demonstrates how Cree's 1.2kV, 300A SiC modules can revitalize older IGBT-module-based systems (100kW–1MW).

Cree is also showcasing its new SiC evaluation board, which enables the high-frequency characterization of SiC MOSFETs and diodes, as well as a new reference design for an extremely lightweight (<25kg), high-power-density 50kW solar inverter based on the latest Cree SiC modules and capable of achieving 99% efficiency.

Also, at the conference, Cree representatives will deliver several presentations:

  • on 15 March, during the WBG Devices and Applications portion of the professional education seminar (2:30–6pm), Marcelo Schupbach, John Mookken, Gangyao Wang and Edgar Ayerbe will present 'Design Considerations for Achieving Robust and Reliable Power Designs Based on Silicon Carbide Power Modules and Discrete Devices'.
  • on 16 March (2–2:30pm), David Cox will present the plenary session 'Power Architectures for the Next Generation of Solid-State Lighting'.
  • on 19 March, during Industry Session 14: Wide Bandgap Semiconductors (2–5:25pm), Edgar Ayerbe will present 'Potential System Benefits of Silicon Carbide in Medical Imaging Applications'. 

Tags: Cree SiC power modules SiC MOSFET

Visit: www.apec-conf.org

Visit: www.cree.com/power

Share/Save/Bookmark
See Latest IssueRSS Feed

EVG