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6 March 2015

Raytheon recognized by Aviation Week for GaN technology innovation

Raytheon Company of Waltham, MA, USA has been named a 2015 Laureate Award winner by Aviation Week for innovation in introducing gallium nitride (GaN)-based technology to military radar systems. Advancing the capability of radars and other types of sensors, GaN radio frequency (RF) amplifiers are more than five times more powerful than semiconductors currently used. For military systems, GaN delivers higher performance as well as significant cost benefit.

The Advanced Technology Programs team of Raytheon Integrated Defense Systems in Tewksbury, MA has a 15-year history of GaN innovation that has shaped existing radar discrimination technology. Partnerships with organizations such as the US Defense Advanced Research Projects Agency (DARPA) and the Office of the Secretary of Defense (OSD) have advanced the development, production and integration of amplifiers based on GaN technology.

GaN produced in Raytheon's DoD trusted foundry in Andover, MA, has been recognized by the DoD for achieving a Manufacturing Readiness Level production capability of '8', the highest level obtained by any organization in the defense industry for this technology. The foundry provides a center of excellence for ongoing programs that require design and fabrication of military RF amplifiers and modules.

See related items:

Raytheon's GaN MMIC technology validated for space applications

Raytheon outlines continuing maturing of GaN technology DARPA's WBGS program

Tags: Raytheon GaN MMIC

Visit: www.raytheon.com

Visit: http://laureates.aviationweek.com/la15/Public/enter.aspx

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