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21 May 2015

MACOM adds GaN power amplifier for narrowband to broadband applications

At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the NPA1006, a gallium nitride (GaN) wideband power amplifier optimized for 20-1000MHz frequency operation. The GaN-on-silicon high-electron-mobility transistor (HEMT) depletion-mode (D-mode) amplifier is suitable for narrowband to broadband applications spanning test & measurement, defense communications, land mobile radio and wireless infrastructure.

The NPA1006 is designed for saturated and linear operation, featuring output levels up to 12.5W (41dBm). It has 50 ohms input matched and output unmatched, 28V operation and 14dB gain. The device also provides 65% drain efficiency at 900MHz. 

MACOM aims to lower the barriers to mainstream GaN adoption by delivering superior technical performance products below LDMOS silicon cost structures. "With our Gen 1 and Gen 2 products fully qualified and millions of units in the field, we are excited to continue leveraging our global design resources and deep GaN application experience to offer the industry the best performance, gain, efficiency and low-cost products with our new Gen 4 technology [launched this week]," says senior product director Gary Lopes. 

Production quantities and samples of the NPA1006 are available from stock.

See related items:

MACOM launches fourth-generation GaN technology

Tags: M/A-COM GaN-on-Si

Visit: www.macom.com/products/product-detail/NPA1006  

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