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8 September 2015

MACOM ships millionth GaN-on-Si RF power device

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has now shipped more than 1 million gallium nitride on silicon (GaN-on-Si) RF power devices to customers for use in communications, military and other RF applications. The milestone in market adoption of the technology comes as GaN-on-Si is finding new potential markets in applications such as magnetron replacements, automotive ignition systems, high-bay lighting and wireless charging, says the firm.

MACOM claims that its proprietary GaN-on-Si RF semiconductor process brings together the best features of gallium arsenide, GaN-on-silicon carbide and LDMOS in a low-cost and scalable manufacturing flow. The milestone demonstrates field-proven reliability and ruggedness in demanding applications such as aerospace & defense and civil and commercial communications, the firm adds.

"MACOM's GaN IP portfolio and strategic licensing agreements have set the foundation for a sustainable, cost-efficient technology [that] we believe can enable GaN production at unprecedented economies of scale," says Michael Ziehl, VP of marketing, RF & Microwave. "Building on this milestone, we expect to see ramping commercial adoption of our GaN technology in other RF applications in the future, including 4G/LTE base stations and RF energy applications."

Tags: M/A-COM

Visit: www.macomtech.com

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