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17 February 2016

EPC launches 100W, 92%-efficient eGaN FET development board for 6.78MHz AirFuel wireless power standard

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC9065, a development board that can serve as the amplifier stage for AirFuel Alliance Class 4 and Class 5 wireless power transfer applications. The board is a zero voltage switching (ZVS) differential-mode class-D amplifier development board configured at, but not limited to, 6.78MHz (lowest ISM band).

The EPC9065 includes all the critical components, including two screw-mounted heat-sinks for increased power capability. It can be easily connected into an existing system to speed end-product time to market.

The development board features the EPC2007C and the EPC8010, which are 100V-rated enhancement-mode gallium nitride FETs. The EPC2007C is used in the class-D amplifier while the EPC8010 is used as a synchronous bootstrap FET. The amplifier can be set to operate in either differential or single-ended mode and includes the gate drivers, a 6.78MHz oscillator, and a separate heat-sink for each Class-D section.

The EPC9065 is priced at $414.00 each and is available now from distributor Digi-Key Corp. Quick Start Guides, containing set-up procedures, circuit diagram, bill of material and Gerber files for the boards, are provided on-line.

Tags: EPC E-mode GaN FETs GaN-on-Si

Visit: http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page

Visit: http://epc-co.com/epc/Products/DemoBoards.aspx

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