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11 July 2016

Rohm launches 1700V SiC MOSFET

Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters.

In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and manufacturing equipment. In most auxiliary power supplies, which are used to provide drive voltages for power supply circuits, control ICs and various supplementary systems, high-breakdown (1000V+) silicon MOSFETs are normally utilized. However, these high-voltage MOSFETs suffer from large conduction loss (often leading to excessive heat generation) and problems related to mounting area and the number of external components, making it difficult to reduce system size. In response, Rohm developed low-loss SiC MOSFETs and control ICs that maximize performance while contributing to end-product miniaturization.

Compared with 1500V silicon MOSFETs used in auxiliary power supplies for industrial equipment, the SCT2H12NZ provides the higher breakdown voltage (1700V) required for auxiliary power supplies in industrial equipment. Also compared with conventional silicon MOSFETs, conduction loss is reduced by 8x (a smaller on-resistance of 1.15Ω), contributing to greater energy efficiency, says Rohm.

In addition, the compact TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment.

Also, using the SCT2H12NZ in combination with Rohm's BD7682FJ-LB AC/DC converter control IC (designed specifically for SiC MOSFET drive) makes it possible to maximize performance and improve efficiency by up to 6%, reckons the firm. At the same time, heat generation is reduced, minimizing thermal countermeasures and enabling the use of smaller components.

Rohm is also launching evaluation boards and kits that make it possible to immediately begin evaluation and development. In addition to the BD7682FJ-LB-EVK-402, a gate drive board for evaluating Rohm's full SiC module along with a snubber module are offered.

The SCT2H12NZ is available now, priced at $3.38/unit (100 pcs).  The Evaluation Board (BD7682FJ-LB-EVK-402) is available now, priced at $492/board.

Rohm is also developing the SCT2H12NY and SCT2750NY 1700V SiC MOSFETs (with on-resistances of 1.15Ω and 0.75Ω, respectively) in a TO268-2L surface-mount-type package that also provides adequate creepage distance.

See related items:

Rohm starts mass production of first trench-type SiC MOSFET

Rohm presenting third-generation SiC trench MOSFETs at PCIM

Tags: Rohm SiC power MOSFET

Visit: www.rohm.com/web/global/products/-/product/SCT2H12NZ

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