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9 June 2016

CoorsTek unveils enhanced GaN-on-Si epiwafers at ISPSD

In stand # 10 at the 28th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2016) in Prague, Czech Republic(12-16 June), engineered ceramics supplier CoorsTek Inc of Golden, CO, USA is unveiling its enhanced gallium nitride on silicon (GaN-on-Si) epitaxial wafers.

For the first time at this event, CoorsTek is displaying the integrated capabilities of CoorsTek and Covalent Materials (formerly Toshiba Ceramics, now CoorsTek KK), including:

  • GaN-on-Si epiwafers for power devices and integrated circuits (ICs); 
  • aluminum nitride (AlN) substrates for hybrid circuits; and
  • engineered ceramic components for semiconductor processing equipment made from PureSiC CVD silicon carbide, PlasmaPure high-purity alumina, and other technical ceramics.

"The latest CoorsTek gallium nitride-on-silicon technology helps customers achieve higher device manufacturing yields and breakdown voltages based on lower defect densities and leakage current," says R&D manager Jun Komiyama PhD. "The shift from 150mm- to 200mm-diameter GaN-on-Si process is also improving the economics for power electronics in electric and hybrid automobiles, solar photovoltaic inverters, RF and microwave power, and more."

Tags: GaN-on-Si

Visit: www.ispsd2016.com

Visit: www.coorstek.com

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