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11 May 2016

Wolfspeed highlighting GaN-on-SiC RF HEMTs at IMS 2016

In booth #1621 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (May 22–27), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — is highlighting its latest RF and microwave devices and foundry services. The firm is also supporting the IMS 2016 STEM (Science, Technology Engineering & Math) program, and several on-site student design competitions. 

Live product demonstrations of the latest Wolfspeed RF technology include the new CGHV14800, designed for L-band radar applications and claimed to be the highest output power 50V GaN HEMT demonstrated to date (providing a minimum of 800W of pulsed power at 1.2–1.4GHz with better than 65% drain efficiency).

Another is the new CGHV59070 GaN HEMT for C-band radar systems, which delivers 50% drain efficiency at high gain, making it a suitable driver for the 350W, 5.2–5.9GHz CGHV59350 device released last year.

Wolfspeed is also showcasing a wideband LTE Doherty power amplifier, developed using the firm's high-performance 0.4µm 50V GaN RF foundry process. The amplifier operates from 1.8–2.2GHz instantaneously, with 55% power-added efficiency at 7.5dB backed off to improve linearity.

Wolfspeed says that, compared to conventional silicon and gallium arsenide devices, its GaN-on-SiC devices deliver higher breakdown voltage, higher-temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths. These qualities allow the firm's GaN devices to enable smaller, lighter and more efficient microwave and RF products, including: radar, broadband, public safety, and ISM (industrial, scientific & medical) amplifiers; broadcast, satellite and tactical communications amplifiers; unmanned aerial vehicle (UAV) data links; cellular infrastructure; test instrumentation; and two-way private radios. 

In addition to supporting the IMS 2016 STEM program, Wolfspeed is supporting two of the on-site student design competitions — one for High Efficiency Power Amplifier Design, and another that focuses on Power Amplifier Linearization Through Digital Pre-Distortion (DPD) — by both speaking with participating students and donating GaN HEMTs, large-signal models, and Doherty amplifiers built with Wolfspeed GaN HEMTs.

See related items:

Cree names Power and RF division Wolfspeed

Tags: Wolfspeed

Visit: www.ims2016.org

Visit: www.wolfspeed.com/RF

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