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3 October 2016

Qorvo launches compact GaN L- and S-band power amplifiers for advanced radar systems

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first 500W, L-band PA internally matched to 50 ohms. The high-power devices are optimized for use in defense and civilian radar systems, with features designed to shorten and simplify system implementation.

Built on Qorvo's gallium nitride (GaN) technology, the new QPD1003 meets the performance needs of high-power phased arrays such as active electronic scanned array (AESA) radars, which operate in the 1.2-1.4GHz frequency range. These systems require PAs that operate at maximum efficiency, resulting in low heat generation in demanding environmental conditions. The QPD1003 addresses these requirements through the use of highly efficient GaN on silicon carbide (SiC) technology.

"This is the first and only compact, internally matched and high-powered L-band PA for AESA radar," claims Roger Hall, general manager of High Performance Solutions at Qorvo.

In addition, Qorvo has also introduced a 450W S-band PA, designed for 3.1-3.5GHz S-band radar systems. Both devices offer advantages in size and ease of implementation over conventional GaN transistors, it is claimed. They enable multiple frequency bands to be covered by a single matched design, reducing circuit footprint and overall complexity when used in multi-kilowatt arrays. Additionally, reducing the amount of power dissipation results in further system operational savings by reducing the need to cool the system.

The new PAs support pulsed and linear operations, and are supplied in an air-cavity package suited for defense and civilian radar applications.

Tags: Qorvo GaN RF GaN-on-SiC

Visit: www.qorvo.com

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