ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


2 September 2016

Mitsubishi Electric sampling 220W GaN HEMT for 2.6GHz-band 4G base transceiver stations

Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base transceiver stations (BTS) of fourth-generation (4G) mobile communication systems. Samples of the 2.5-2.7GHz MGFS53G27ET1 will be released from 1 November.

Picture: Mitsubishi Electric's new MGFS53G27ET1 GaN-HEMT for 2.6GHz 4G BTS.

High-speed 4G mobile communication systems including long-term evolution (LTE) and LTE-Advanced are being equipped with progressively smaller base transceiver stations for macro-cells to increase data capacity and to reduce power consumption.

High efficiency results in a simpler cooling system, which reduces BTS size and power consumption. In addition, launching 220W models for 2.6GHz-band macro-cell BTS has involved Mitsubishi Electric expanding its GaN-HEMT lineup to add a flangeless ceramic package, reducing the size of the device itself as well as related power amplifier modules. Hence, Mitsubishi Electric says that, through transistor optimization, its highly efficient new GaN HEMT for 2.6GHz-band macro-cell BTS will help to realize an even smaller and lower-power BTS.

Mitsubishi Electric says that, going forward, its GaN HEMT range will be further expanded with products for different outputs and frequencies, as well as adapted for mobile communication systems beyond 4G.

See related items:

Mitsubishi Electric expanding lineup of 3.5GHz GaN HEMTs for 4G base transceiver stations

Tags: Mitsubishi Electric GaN HEMT

Visit: www.MitsubishiElectric.com

See Latest IssueRSS Feed