, GaN Systems releases high-power Insulated Metal Substrate evaluation platform


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18 December 2017

GaN Systems releases high-power Insulated Metal Substrate evaluation platform

© Semiconductor Today Magazine / Juno Publishing

GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) has launched its Insulated Metal Substrate (IMS) Evaluation Platform, which provides a flexible, low-cost, high-power development platform for high-efficiency power systems with 3kW-or-higher applications.

In combination with GaNPX packaging technology and smart design techniques, the IMS evaluation platform enables power engineers to quickly take full advantage of GaN power transistors in designing smaller, lighter, lower-cost, and more efficient power systems for data-center, automotive, and energy-storage system applications.

The platform consists of a high-power motherboard (GSP65MB-EVB) and two variants of IMS evaluation modules configured in half-bridge (single IMS module) and full-bridge (two IMS modules). IMS evaluation modules are available in two power levels: 3kW (GSP65R25HB-EVB) and 6kW (GSP65R13HB-EVB). Each module includes GaN E-HEMTs, gate drivers, isolated DC/DC supply, DC bus decoupling capacitors, and a heat-sink to form a fully functional half-bridge power stage.

Benefits of the platform are said to include:

  • Low thermal resistance & optimized layout: The IMS platform enhances the thermal and electrical performance benefits of GaNPX E-HEMTs. The drive board is tightly coupled with the IMS board to minimize power commutation and gate driver loops to optimize performance.
  • Greater flexibility: The platform enables 12 different configurations, architectures and operating modes. IMS evaluation modules can be used independently as a high-power GaN intelligent power module with developers’ own system boards for in-system prototyping.
  • Greater power density: Using IMS boards for transistor mounting takes advantage of the vertical space available in larger-power applications. The optimized driver board not only minimizes both power and gate driver loops, it also increases the power density of the electronics.

“The power level that the new IMS platform provides is unrivaled,” claims Peter Di Maso, director, product line management. “Higher power density, at a low cost, makes possible new applications and new revenue streams of power systems in existing markets and applications.”

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit: www.gansystems.com

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