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6 February 2017

GaN Systems makes available thermal RC models for GaN transistors to enhance accuracy of power system SPICE simulations

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – says that it has seen a surge in the number of customers designing and deploying power systems using its GaN transistors, as they recognize that GaN devices significantly improve power efficiency and power density. By using GaN transistors instead of legacy silicon components, users can enter the market with 50W-50kW power systems that are up to 5x smaller and 3x lighter, reckons the firm.

To support customers that are modeling new systems using SPICE simulations, GaN Systems has released individual computer models for each of its products as well as a new application note, GN007 'Modeling Thermal Behavior of GaN Systems' GaNPX Using RC Thermal SPICE Model'. The GN007 application note can be downloaded from the Download section of the company website. Individual models can be downloaded from their respective product page.

GaN Systems' transistors are provided in a feature-rich GaNPX package that is designed for extreme speed and current. The low-profile GaNPX package has high power dissipation and low inductance, which enables fast, MHz power switching. Users can now verify the package's optimal thermal performance by using the GN007 SPICE model protocol.

"Our customers are constantly pushing on design limits that only our GaN can enable," says Larry Spaziani, VP of sales & marketing. "We've invested in expert thermal simulations that use state-of-the-art finite element analysis (FEA) tools to model our best-in-class power devices," he adds. "The models have been converted into easy-to-use SPICE models and have been verified both in multiple simulation environments and in the test laboratory."

Tags: GaN Systems Power electronics

Visit: www.gansystems.com/whitepapers.php

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