20 February 2017

OSI Laser Diode launches 1550nm InGaAs APD module

OSI Laser Diode Inc (LDI) of Edison, NJ, USA (an OSI Systems Company) has launched the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module designed for light level detection and/or signal transmission applications.

The new 50µm active-area device features low dark current, low back reflection, and high speed (2.5GHz) in a miniature package. With spectral response from 1000nm to 1650nm at 25°C, the typical operational wavelength is 1550nm.

The APD is housed in a hermetically sealed 3-pin coaxial package and is coupled to a single-mode fiber pigtail. The overload-tolerant LAPD 3050 device is suitable for optical time-domain reflectometers (OTDRs), line receivers, and long-haul applications. The breakdown voltage is from 50V (minimum) to 70V (maximum) and operating and storage temperatures range from -40°C to +85°C.

Tags: APD

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