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24 February 2017

Wolfspeed expands third-generation MOSFET platform to 1200V

Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including MOSFETs, Schottky diodes, and modules — has expanded its C3M platform by introducing the C3M0075120K, a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI and enabling 99% efficiency levels in three-phase power factor correction circuits, reckons Wolfspeed.

These features enable designers of applications such as telecom power supplies, elevators, grid-tied storage, on- and offboard electric vehicle (EV) charging as well as factory automation to increase switching frequency while maintaining efficiency, decreasing system size and bill of materials, the firm adds.

"These new package options, such as the surface-mount 7L D2PAK, allow us to explore new topologies not possible with existing products available on the market," comments Kurt Goepfrich, a hardware architect at Siemens.

The new device achieves what is claimed to be the industry's lowest figure-of-merit for any SiC MOSFET at 1200V. Wolfspeed has launched it in a 4L TO-247 package and plans to release it in a 7L D2PAK in the coming weeks.

"SiC MOSFETs have proven to be beneficial for many high-power applications connected to a battery simply due to the improved efficiency," says chief technology officer John Palmour. "In the case where power is bi-directional, such as grid-connected AC-DC, the potential cost savings are significantly increased due to the reduction in the size of the input filter."

The new device features Wolfspeed's third-generation C3M planar MOSFET technology, which engineers have already designed into various automotive and industrial applications. It features low on-resistance (75mΩ) combined with a low gate charge, making it suitable for three-phase, bridgeless power factor correction (PFC) topologies as well as AC-AC converters and chargers.

Wolfspeed says that the newly released packages allow engineers to take full advantage of the high-frequency capability of its latest SiC MOSFET chips. The 4L TO247 package delivers a three-fold reduction in total switching losses compared with a conventional TO-247-3 package.

The 7L D2PAK surface-mount package, specifically designed for high-voltage MOSFETs, practically eliminates the source inductance found in other packages and has a footprint 52% smaller than D3PAKs, Wolfspeed reckons. This is made possible by the small die size and high-blocking capability of C3M planar MOS technology.

The firm notes that designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. These higher-voltage SiC MOSFETs solve many of the limitations of silicon super-junction MOSFETs that make them impractical to use in two-level topologies, adds Wolfspeed. SiC has significantly lower output capacitance nonlinearity, making it possible to reduce the dead-time and hence minimizing total harmonic distortion at higher switching frequencies.

The new C3M0075120K 1200V, 75mΩ MOSFET is available in a through-hole, 4L TO247 package and is currently available for purchase from several distributors. The surface-mount version C3M0075120J will be released in the coming weeks. Like the 4L-TO247, the surface-mount devices include a Kelvin-source pin to help minimize gate-ringing and reduce system losses.

See related items:

Wolfspeed launches first 1000V SiC MOSFET

Tags: Wolfspeed Cree SiC MOSFET Power electronics

Visit: www.wolfspeed.com/c3m0075120k

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