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26 January 2017

EPC opens eGaN FET and IC Applications Center and appoints senior applications engineer

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has opened an Applications Center in Blacksburg, Virginia that will support R&D on the applications of eGaN transistors and ICs. In addition to traditional FET and IC power conversion applications, GaN technology has enabled emerging applications such as wireless power transfer, LiDAR for autonomous vehicles, and envelope tracking for high-bandwidth 4G and 5G communications.

In support of the center's opening, Suvankar Biswas Ph.D. has been appointed as senior applications engineer. Dr Biswas' experience includes work involving converter topology for the integration of photovoltaic modules, grid-tied inverters, and storage. He also has research experience in the integration of harvested power in mobile devices, power delivery architecture in mobile platform-level systems, and plug-in hybrid vehicles and their connectivity with the smart grid.

Biswas is an active member of IEEE with numerous peer-reviewed published articles. He obtained his bachelor of electrical engineering degree from the Indian Institute of Technology Kharagpur and his doctorate degree from the University of Minnesota.

"The opening of the Blacksburg Applications Center is an important component of our continuous efforts to focus on customer partnerships when designing eGaN technology-based solutions and demonstrating eGaN transistors' superior performance over MOSFETs and LDMOS," says CEO & co-founder Alex Lidow. "We are very pleased to have Biswas joining us at this time of widespread, fast-growing adoption of GaN-based solutions."

Tags: EPC E-mode GaN FETs

Visit: www.epc-co.com

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