- News
12 January 2017
Toshiba begins shipping second-generation 650V SiC Schottky barrier diodes with surge forward current improved by 70%
Toshiba Corp's Storage & Electronic Devices Solutions Company has begun shipping a new line-up of eight second-generation 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) that improve on the surge forward current (IFSM) offered by the firm's existing products by about 70%.
Fabricated with Toshiba's second-generation SiC process, the new SiC Schottky barrier diodes deliver about 70% better surge forward current than its first-generation products, while reducing the switching loss index RON x Qc (anode-cathode on-resistance times total capacitive charge) by about 30%, making them suitable for use in efficient power factor correction (PFC) schemes.
Available in four current ratings of 4A, 6A, 8A and 10A - either in a non-isolated TO-220-2L package or an isolated TO-220F-2L package - the new products can contribute to improving the efficiency of power supplies in devices including 4K large screen LCD TVs, projectors and multi-function copiers, and in industrial devices such as telecom base-stations and PC servers, says Toshiba.
Toshiba SiC Schottky barrier diodes