ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


7 June 2017

EPC introduces EPC2111 GaN half bridge

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, says the firm. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

EPC2111 is ideal for high frequency 12 V to point-of-load DCDC conversion. Each device within the EPC2111 half-bridge component has a voltage rating of 30 V. The upper FET has a typical RDS(on) of 14 mΩ, and the lower FET has a typical RDS(on) of 6 mΩ. EPC2111 comes in a chipscale package for improved switching speed and thermal performance, and is 3.5 mm x 1.5 mm for increased power density.

A primary application for this device is for notebook and tablet computing. The power conversion circuitry in these systems occupy nearly half of the space and define the height of the motherboard. The high frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next generation mobile computing, says the firm.

Tags: EPC GaN FETs GaN

Visit:  www.epc-co.com

See Latest IssueRSS Feed