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14 March 2017

EPC showcasing applications using eGaN FETs and ICs at APEC

At the Applied Power Electronics Conference (APEC 2017) in Tampa, Florida (26–30 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – is delivering seven technical presentations on GaN technology and applications. It will also feature its latest eGaN FETs and ICs, as well as their customers’ end products that are enabled by eGaN technology.

In booth, #530, demonstrations will include a single tabletop implementing a high-power resonant wireless charging solution capable of supporting a wide range of devices, including cell phones, notebook computer, monitor, and table lamps. In addition, a brushless DC precision motor drive, a range of 3D real-time LiDAR imaging sensors used in autonomous vehicles, a high-intensity LED truck headlight, and a showdown between the best-in-class silicon MOSFETs and the latest high-performance 100/200V eGaN FETs will be demonstrated. EPC says that these latest eGaN FETs cut the size of its devices in half while tripling performance. This virtuous cycle of smaller size, lower costs and higher performance is expanding the gap in both performance and cost between eGaN FETs and ICs and the aging power MOSFET, the firm adds.

Technical presentations featuring GaN FETs and ICs include the following:

  • ‘GaN Transistors for Efficient Power Conversion’ by Alex Lidow on 29 March (11:15–11:45am; Exhibitor Session, Room 13).
  • ‘Evaluation of Gate Drive Overvoltage Management Methods for Enhancement Mode Gallium Nitride Transistor’ by David Reusch and Michael de Rooij on 29 March (2–5:30pm; Session T17).
  • ‘Re-Evaluating 48Vin Server Architectures with High Performance GaN Transistors’ by David Reusch on 29 March (2–5:30pm; Session IS10).
  • ‘Moore’s Law is Alive with GaN’ by Alex Lidow on 29 March (2–5:30pm; Session IS09).
  • ‘Deadtime Losses in eGaN FETs and Silicon MOSFETs – How Freedom from Reverse Recovery Can Cut Your Losses’ by John Glaser on 30 March (8:30–11:30am; Session IS13).
  • ‘Advancements in Reliability Evaluation of eGaN FETs and ICs Demonstrates Readiness for Mainstream Adoption’ by Chris Jakubiec on 30 March (8:30–11:30am; Session IS13).
  • ‘Wireless Power Class E Using eGaN FET and eGaN Gate Driver IC’ by Yuanzhe Zhang on 24 March (2–5:30pm; Session IS19).

Tags: EPC E-mode GaN FETs

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Visit: www.epc-co.com

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