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16 May 2017

Infineon begins volume production of first full-SiC-module, and adds to CoolSiC family

Infineon Technologies AG of Munich, Germany is commencing volume production of the EASY 1B, claimed to be the first full- silicon carbide (SiC) module after it was announced at the 2016 Power Conversion and Intelligent Motion (PCIM) Europe expo. Now, in booth #412 (hall 9) at this year’s PCIM 2017 in Nuremberg, Germany (16-18 May), the firm is showcasing additional module platforms and topologies for the 1200V CoolSiC MOSFET family.

“Silicon carbide has reached a tipping point: Taking cost-benefit analysis into account, it is ready for use in a variety of applications,” believes Dr Peter Wawer, Division President Industrial Power Control at Infineon. “To make the new semiconductor technology a revolution to rely on however, it needs a partner like Infineon. Products tailored to the application, our own production capacities, comprehensive technology portfolio and system understanding: these four building blocks have made us the market leader for power semiconductors,” he claims. “We want and will also achieve this with our SiC product portfolio.”

The new 1200V SiC MOSFETs have been optimized to combine high reliability with performance. They show dynamic losses that are an order of magnitude lower than 1200V silicon IGBTs. First products will initially support upcoming system challenges in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) and charging/storage systems. The new configurations will also enable new solutions in industrial drives, medical technology or auxiliary power supplies in the railway sector in the near future, it is reckoned.

A major advantage of the trench technology with the 1200V SiC MOSEFT lies in extended robustness. This is due to the lower failure in time (FIT) rate and the short-circuit capability, which can be adapted to the respective application. Thanks to a threshold voltage (Vth) of 4V and the recommended switch-on threshold (VGS) of +15V, the transistors can be controlled like an IGBT and safely switched off in the event of a fault. The SiC MOSFETs enable very fast switching transients. In addition, Infineon’s technology offers easy adjustability of the transients via gate series resistors, says the firm. The EMC behavior can thus be easily optimized.

Picture: Easy1B with Six-Pack topology.

Already last year, Infineon announced the lead products EASY 1B (half-bridge/booster) as well as the discrete TO-247-3pin and -4pin solutions. The EASY 1B platform is well established and a suitable module platform for fast-switching devices. At PCIM 2017, Infineon is exhibiting additional module platforms and topologies based on the 1200V SiC MOSFET technology, extending the performance spectrum of the CoolSiC MOSFETs step by step. Among others, Infineon is showcasing the following SiC modules:

  • EASY 1B with B6 (Six-Pack) topology: the module is characterized by the proven Infineon module configuration with an on-resistance (R DS(ON)) of only 45mΩ. An integrated body diode ensures a low-loss freewheeling function. The EASY 1B is suitable for applications in drives, solar or welding technology.
  • EASY 2B with Half-Bridge topology: this larger EASY device offers enhanced performance with an RDS(ON) of 8mΩ per switch. The low-inductance module concept is suitable for applications with more than 50kW and fast-switching operations. These include solar inverters, quick-charging systems or UPS solutions.
  • 62mm with Half-Bridge topology: an additional half-bridge configuration featuring even higher power with an RDS(ON) of 6mΩ per switching function. This module platform offers the possibility of low-inductance connection of systems in the medium-power range. A great variety of applications make use of this, including medical technology or auxiliary power supplies in the railway sector, says Infineon. Because of the large number of possible applications, Infineon anticipates rapid spread of this module.

The lead products introduced at PCIM 2016, EASY 1B and the two discrete devices TO-247-3pin and -4pin, are gradually entering volume production during 2017. The Half-Bridge configuration for the EASY 1B is available now. Its market launch is supported by various driver modules and demonstration boards (also available now). The new product configurations are available as samples, and the serial start is planned for 2018.

See related items:

Infineon unveils CoolSiC MOSFET technology to boost power conversion

Tags: Infineon SiC MOSFET

Visit:  www.infineon.com/coolsic

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