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18 May 2017

Navitas’ CTO presenting GaN Power IC developments at ISPSD 2017

Navitas Semiconductor Inc of El Segundo, CA, USA says that, at the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2017) at the Royton Sapporo Hotel, Japan (28 May – 1 June), its co-founder & chief technology officer/chief operating officer Dan Kinzer will deliver a plenary address ‘Developments in GaN Power ICs’ on 29 May.

The paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the new technology. “We are also delighted by the response of the power electronics industry to our GaN power IC’s innovations,” says Kinzer.

Founded in 2013, Navitas introduced what it claimed to be the first commercial GaN power ICs. The firm says that its proprietary 'AllGaN' 650V platform monolithically integrates GaN power field-effect transistors (FETs) with logic and analog circuits, enabling smaller, higher-energy-efficiency and lower-cost power for mobile, consumer, enterprise and new energy markets.

“ISPSD Japan 2017 is a key opportunity for Navitas to present advances in GaN power ICs and how they are enabling new benchmarks in speed, efficiency and power density at an affordable cost,” says VP of sales & marketing Stephen Oliver. “Since launching our single- and half-bridge GaN Power ICs the high customer demand is validating the huge advantages of the Navitas portfolio,” he adds. Over 30 Navitas patents are granted or pending.

See related items:

Navitas launches first integrated half-bridge GaN power IC

Navitas delivers first GaN power ICs

Navitas' CEO presenting AllGaN power ICs at WiPDA 2016

Tags: GaN Power electronics

Visit:  www.ispsd2017.com

Visit:  www.navitassemi.com

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