, CST Global appoints principal device development engineer


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27 November 2017

CST Global appoints principal device development engineer

© Semiconductor Today Magazine / Juno Publishing

III-V optoelectronic foundry Compound Semiconductor Technologies Global Ltd (CST Global) of Hamilton International Technology Park, Blantyre, near Glasgow, Scotland, UK (a subsidiary of Sweden’s Sivers IMA Holdings AB) has appointed Dr Susannah Heck as principal device development engineer.

“Susannah brings a wealth of technical experience in monolithic and hybrid optoelectronic integration; active and passive device design and verification on III-V compound semiconductors; and epitaxy, lithographic-mask and process design for wafer production,” notes technical director Dr Andrew McKee. “She also brings invaluable project planning, budgeting, resource allocation and management expertise, with exceptional communication skills.”

Heck was previously principal engineer at Kaiam Corp in Livingston, West Lothian, Scotland, and senior R&D engineer at Oclaro Inc in Northamptonshire, England. She has been both program manager and technical lead on projects including next-generation, 100G data-center optoelectronic hardware design, development and verification.

Heck began her working career as a research intern at the Tyndall National Institute at University College Cork, Ireland, before becoming a research associate in the Experimental Solid-State Physics department at Imperial College London.

Heck has a B.Sc. Hons and Ph.D. in Physics from University College Cork, specializing in characterization of quantum dot and dash devices; material properties related to quantum dot anisotropy; and threshold current and efficiency of III-V semiconductor lasers. Also, she is the author and co-author of a number of journal articles and conference papers in the photonics field.

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