, Navitas’ co-founder delivering keynote on GaN power ICs at WiPDA 2017


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6 October 2017

Navitas’ co-founder delivering keynote on GaN power ICs at WiPDA 2017

Navitas Semiconductor Inc of El Segundo, CA, USA says that, at the 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2017) at the Hyatt Regency Tamaya Resort, Albuquerque, NM, USA, co-founder & VP of engineering Dr Nick Fichtenbaum will deliver a keynote address ‘GaN Power ICs: Device Integration Delivers Application Performance’ at 8:30am on 1 November.

Fichtenbaum will also provide real-world insights in a panel discussion ‘Commercialization of GaN Devices in High-Frequency Power Electronic Applications’ at 10:30am on 31 October.

“WiPDA is an influential forum as it brings together many of the best minds in power devices,” comments Fichtenbaum, who has been pioneering GaN materials and devices for nearly 15 years. “It is a great honor to present the latest in GaN technology including advances in the monolithic integration of analog, digital and power circuits all in GaN to solve fundamental challenges in high-speed, high density applications,” he adds.

Founded in 2013, Navitas introduced what it claimed to be the first commercial GaN power ICs. The firm says that its proprietary 'AllGaN' 650V platform process design kit (PDK) monolithically integrates GaN power field-effect transistors (FETs) with logic and analog circuits, enabling smaller, higher-energy-efficiency and lower-cost power for mobile, consumer, enterprise and new energy markets.

“Navitas has developed high-performance, easy-to-use GaN power ICs for next-generation applications in advanced mobile, industrial and consumer markets,” says VP of sales & marketing Stephen Oliver. “Fichtenbaum’s presentation highlights advanced research, practical development and real-world commercial implementation of this new GaN material,” he adds. “We look forward to discussing these GaN innovations as GaN adoption accelerates throughout the power industry.”

In September, Navitas introduced what is claimed to be the smallest 65W USB-PD laptop adapter reference design in support of the dramatic size and weight reductions driven by market demand. The NVE028A uses Navitas high-frequency, high-efficiency AllGaN GaN Power ICs to deliver 65W in a package up to five times smaller and lighter than traditional silicon-based designs. Since introducing the AllGaN platform at APEC’16, Navitas has announced single and half-bridge GaN power ICs, plus the smallest 150W adapter.

See related items:

Navitas’ GaN power ICs enable smallest 65W USB-PD laptop adapter

Navitas launches first integrated half-bridge GaN power IC

Navitas delivers first GaN power ICs

Navitas' CEO presenting AllGaN power ICs at WiPDA 2016

Tags: GaN Power electronics

Visit: www.wipda.org

Visit: www.navitassemi.com

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