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12 April 2018

Cree licenses GaN power device patents to Nexperia

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Cree Inc of Durham, NC, USA has signed a non-exclusive, worldwide, royalty-bearing patent license agreement that provides discretes, logic and MOSFET device maker Nexperia BV of Nijmegen, The Netherlands, with access to its gallium nitride (GaN) power device patent portfolio, which includes over 300 issued US and foreign patents that describe aspects of high-electron-mobility transistor (HEMT) and GaN Schottky diode devices. The portfolio addresses novel device structures, materials and processing improvements, and packaging technology. The patent license involves no transfer of technology.

“Cree was founded to develop novel compound semiconductor materials like GaN and SiC and to create devices that capitalize on their unique properties,” says John Palmour, co-founder of LED chip, lamp and lighting fixture maker Cree and chief technology officer of its Wolfspeed business (which makes power & RF devices and silicon carbide materials). “Cree’s decades of innovation are now yielding devices that enable market introductions of new power management and wireless systems. To help facilitate the growth of these new markets, Cree is licensing its GaN power device patents for GaN power-management systems.”

Tags: WolfspeedCree

Visit: www.cree.com/About-Cree/Licensing/Licensees

Visit: www.wolfspeed.com

Visit: www.nexperia.com

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