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22 August 2018

TowerJazz showcasing SiGe and silicon photonic processes for 100-400Gb/s optical data links

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In booth #569 at the 44th European Conference on Optical Communication (ECOC 2018) in Rome, Italy (23-27 September), specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its US subsidiaries Jazz Semiconductor Inc in Newport Beach, CA and TowerJazz Texas Inc in San Antonio, TX, and at TowerJazz Japan Ltd) is showcasing its silicon germanium (SiGe) process, with speeds in excess of 300GHz, and its newest production SiPho (silicon photonics) process built into data-center high-speed optical data links.

TowerJazz claims that it has a significant foundry share of the 100Gb/s transceiver market served by its SiGe Terabit Platform, and it is showcasing even higher SiGe transistor speeds and patented features appropriate for 200 and 400Gb/s communication ICs such as transimpedance amplifiers (TIAs), laser and modulator drivers, and clock & data recovery circuits.

TowerJazz’s SiPho production platform enables high-bandwidth photodiodes, together with waveguides and modulators, with a roadmap to allow indium phosphide (InP) components on the same die and permit a high level of optical integration for next-generation data-center optical links. An open design kit is available to all customers and supported by prototyping and shuttle runs.

See related items:

TowerJazz announces first open foundry silicon photonics design kits with EDA tool support

TowerJazz announces 300GHz SiGe technology optimized for 400GbE

TowerJazz adds 300GHz S4 process to SiGe Terabit Platform

Tags: TowerJazz SiGe Silicon photonics

Visit: www.towerjazz.com

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