15 January 2018
STMicroelectronics showcasing solutions for smart driving at Automotive World
© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.
With the automotive industry is seeing rapid advances in the development of technologies such as autonomous driving, advanced driver-assistance systems (ADAS), vehicle-to-everything (V2X) communication, and power management in electric vehicles (EVs), in booth E43-47 at Automotive World 2018 in Tokyo, Japan (17-19 January) STMicroelectronics of Geneva, Switzerland is exhibiting its latest semiconductor solutions for smart driving.
ST is highlighting its silicon germanium (SiGe)-based transceiver ICs for long-range (77/81GHz) and short-range (24/26GHz) radar, which can measure the distance between automobiles or between automobiles and objects: 77GHz radar systems are suitable for next-generation features such as high-speed adaptive cruise control (ACC) that require high power output; 24GHz systems are suitable for blind-spot detection, collision avoidance, and lane-departure warning applications.
ST is also exhibiting an automotive power semiconductors based on silicon carbide (SiC). The firm says that its automotive SiC power MOSFET is characterized by low power loss during switching - about 1/4 the loss compared with existing mainstream silicon-based insulated-gate bipolar transistors (IGBTs) - as well as operation across a wide temperature range. ST is also highlighting an automotive SiC diode with reverse recovery properties superior to those of silicon bipolar diodes. The firm says that its silicon carbide can be used in hybrid, electric and other automotive systems, as well as in railway, industrial and solar-power applications.
STMicroelectronics SiGe BiCMOS Radar SiC power MOSFET SiC Schottky barrier diodes