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11 June 2018

Integra showcasing new RF power devices at IMS 2018

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

In booth #815 at the IEEE MTT-S International Microwave Symposium (IMS 2018) in Philadelphia, MA, USA (10–15 June), Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power RF and microwave transistors and power amplifier modules, is showcasing several new devices, including an array of new 50Ω (fully matched) RF power transistors and integrated RF power modules (pallets) for pulsed radar applications.

The IGNP0912L1KW is a 50Ω GaN/SiC (gallium nitride on silicon carbide) RF power module for L-band avionics systems operating over the instantaneous bandwidth of 0.960-1.215GHz. The integrated amplifier module supplies a minimum of 1000W of peak pulse power, under the conditions of 2.5ms pulse width and 20% duty cycle, while offering what is claimed to be excellent thermal stability.

The IGT5259L50 is a 50Ω GaN/SiC transistor, offering 50W at 5-6GHz for pulsed C-band radar applications.

The IGN1214L500B is a high-power GaN/SiC high-electron-mobility transistor (HEMT) that supplies 500W at 1.2-1.4GHz and offers 50V drain bias, 15.5dB gain, and 65% efficiency. The transistor is designed for long-pulse L-band radar applications.

Tags: Integra GaN-on-SiC HEMT

Visit: www.integratech.com

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