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8 June 2018

WIN expands GaN power process capabilities to 0.45µm-gate technology for 5G applications

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

WIN Semiconductors Corp of Taoyuan City, Taiwan – the largest pure-play compound semiconductor wafer foundry – has expanded its gallium nitride (GaN) process capabilities to include a 0.45µm-gate technology that supports current and future 5G applications.

The NP45-11 GaN-on-SiC process allows customers to design hybrid Doherty power amplifiers used in 5G applications including massive MIMO (multiple-input and multiple-output) wireless antenna systems. Similar to macro-cell applications, MIMO base stations often combine Doherty power amplifiers with linearization techniques to meet demanding linearity and efficiency specifications of today’s wireless infrastructure.

GaN devices outperform the incumbent LDMOS technology, offering superior efficiency, instantaneous bandwidth and linearity, particularly in the higher frequency bands utilized in 5G radio access networks, notes WIN.

Suitable for use in sub-6GHz 5G applications including macro-cell transmitters and MIMO access points, the NP45-11 technology supports power applications from 100MHz through 6GHz. The discrete transistor process is environmentally rugged, incorporating advanced moisture protection and meets the JEDEC JESD22-A110 biased HAST qualification at 55V. Combined with WIN’s, IP3M-01 environmentally rugged high-voltage passive technology, NP45-11 enables hybrid power amplifiers in a low-cost plastic package, says the firm.

The NP45-11 technology is fabricated on 100mm silicon carbide substrates and operates at a drain bias of 50V. In the 2.7GHz band, it provides saturated output power of 7W/mm with 18dB linear gain and more than 65% power-added efficiency (PAE) without harmonic tuning.

“5G radio access networks create several challenges to power amplifier designs used in MIMO systems,” says senior VP David Danzilio. “High output power and linear efficiency are primary design objectives to meet performance specifications and lower total cost of ownership,” he adds. “The tradeoff between output power and linearized efficiency is significant because of the high peak-to-average power ratio employed in today’s wireless modulation schemes. This tradeoff becomes more difficult in 5G applications due to greater instantaneous bandwidth requirements and higher operating frequency.”

NP45-11 sample kits are available and can be obtained by contacting WIN’s regional sales managers.

WIN is showcasing its compound semiconductor RF and mm-Wave solutions in booth 415 at the IEEE MTT-S International Microwave Symposium (IMS 2018) in Philadelphia, PA, USA (10-15 June), where David Danzilio is presenting a paper at the 5G Power Amplifier Technology Workshop on 11 June.

See related items:

WIN enhances 0.25µm GaN power process

Tags: WIN Semiconductors

Visit: www.winfoundry.com

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