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5 June 2018

Wolfspeed’s new third-generation 1200V MOSFET extends SiC-based power conversion into EV drivetrains

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Wolfspeed of Durham, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — says that its new C3M third-generation 1200V SiC MOSFET family can be used in the drivetrain of electric vehicles (EVs).

Development of the switching device, which enables high-voltage power conversion, brings increased efficiency to the drivetrain while lowering system costs, paving the way for longer driving range and better overall EV performance.

“There is a growing global demand for more electric vehicles on the road, with nearly all vehicle manufacturers announcing new electric platforms across their fleets,” says Cree Inc CEO Gregg Lowe. Wolfspeed’s new silicon carbide MOSFET portfolio helps to foster the adoption of electric vehicles, he adds.

In 2015, Wolfspeed introduced what was claimed to be the industry’s first 900V SiC MOSFET family, enabling SiC adoption in off-board and on-board chargers by delivering smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. The new 1200V MOSFET extends the firm’s technology into the drivetrain, enabling the most efficient EV power converter systems.

Wolfspeed says that its new C3M 1200V SiC MOSFET can handle high current with what is claimed to be the industry’s lowest drain-source on resistance (RDS(on)) performance at 1200V and the lowest switching losses, giving it the highest figure of merit on the market, which increases the distance that consumers can drive on a single charge.

“Wolfspeed’s expanded SiC portfolio will make it possible for auto suppliers and manufacturers to develop the EV ecosystem of the future,” says Wolfspeed’s general manager Cengiz Balkas. “Our components enable smaller, lighter systems that deliver more miles per charge. This allows us to bridge the gap between EVs and gas vehicles on cost and performance.”

Engineering samples of Wolfspeed’s newest-generation 1200V SiC MOSFETs are available to select customers and will be in full distribution later this year.

In addition to the 1200V SiC MOSFET, Wolfspeed says that it continues to deliver better charging efficiency for EVs with enhanced SiC products for on-board and off-board chargers, including:

  • E-Series diodes: the first 1200V SiC diodes to be both automotive qualified and high-humidity/high-voltage/high-temperature qualified;
  • 20kW two-level AFE (active front-end) and 20kW DC/DC converters: demonstrating how Wolfspeed C3M SiC MOSFETs can cut power losses and simplify system designs; and
  • 6.6kW bi-directional on-board charger: delivers optimal efficiency for high-power-density, on-board charger applications.

Wolfspeed’s C3M 1200V SiC MOSFET and the expanded portfolio of SiC power products are on display in booth #9-242 at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June).

Tags: Wolfspeed Cree SiC MOSFET

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.wolfspeed.com/RF

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