- News
29 May 2018
MACOM showcasing RF and microwave portfolio at IMS
© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.
In booth #1125 at the IEEE’s International Microwave Symposium (IMS 2018) in the Philadelphia Convention Center (12–14 June), MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for RF, microwave, millimeter-wave and lightwave applications) is showcasing its GaN-on-silicon (GaN-on-Si) portfolio, Lightwave Antennas, and other high-performance MMIC and diode products, including new products optimized for 5G connectivity, wireless basestations, radar, test & measurement, industrial, scientific and medical RF applications:
Lightwave Antenna solutions: Combining RF coherent beamforming and fiber-to-the-element optical transport to deliver wideband performance, low latency and improved spectral efficiency;
Enabling next-gen wireless base-stations: GaN-on-Si 60W average power Doherty module;
Front-end modules (FEMs): delivering performance and reliability for wireless networking leveraging proprietary switching technology and integration;
RF Energy: the first GaN-on-Si-based RF Energy Toolkit;
GaN-on-silicon: Combining manufacturing scale, supply security and surge capacity from STMicroelectronics with MACOM’s GaN-on-Si RF power products to address mainstream consumer, automotive and wireless base-station programs;
High-performance RF components: showcasing MACOM’s high-performance MMICs, limiter diode design, cross-reference tools and application-specific solutions.
MACOM is also participating in sessions throughout IMS, including:
5G Summit: ‘GaN-on-Silicon Transcendent – Enabling The Cost, Integration, and Affordability Challenges to Make 5G a Reality’ by Anthony Fischetti, 12 June (1pm EST, room 103ABC).
Technical Session: ‘A Novel CAD Probe for Bidirectional Impedance and Stability Analysis’ by Tom Winslow, 13 June (3:30pm EST, room TBD).