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29 May 2018

Microsemi samples next-gen 1200V MOSFET and 700V Schottky barrier diode devices

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) is expanding its silicon carbide (SiC) MOSFET and diode product portfolios early next quarter, including samples of its next-generation 1200V, 25mΩ and 80mΩ SiC MOSFET devices; next-generation 700V, 50A Schottky barrier diode (SBD) and corresponding die.

These SiC products, along with other recently announced devices in the SiC SBD/MOSFET product families, are being demonstrating in booth 318 (hall 6) at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June).

Microsemi says that, as it continues to expand development efforts for its SiC product family, it has become one of the few suppliers providing a range of Si/SiC power discrete and module solutions to the market. The next-generation SiC MOSFETs are suitable for industrial and automotive markets applications, including hybrid electric vehicle (HEV)/EV charging, conductive/inductive onboard chargers (OBCs), DC-DC converters and EV powertrain/traction control. They can also be used for switch mode power supplies (SMPS), photovoltaic (PV) inverters, and motor control in medical, aerospace, defense and data-center applications.

“Fast adoption of SiC solutions for applications such as EV charging, DC-DC converters, powertrain, medical and industrial equipment, and aviation actuation demand a high degree of efficiency, safety and reliability on components used in such systems,” says Leon Gross, VP & business unit manager for Microsemi’s Power Discretes and Modules business unit. “Microsemi’s next-generation SiC MOSFET and SiC diode families will include AEC-Q101 qualifications, which will ensure high reliability while ruggedness is demonstrated by high repetitive unclamped inductive switching (UIS) capability at rated current without degradation or failures.”

According to market research firm Technavio, the SiC market for semiconductor applications is expected to grow at a compound annual growth rate (CAGR) of more than 18% to nearly $540.5m by 2021. In particular, it forecasts that the SiC market for automotive semiconductor applications will grow at a CAGR of nearly 20%. Microsemi reckons that it is well-positioned with these trends, with its SiC MOSFET and Schottky barrier diode devices avalanche-rated with a high short-circuit withstand rating for robust operation, and the capabilities necessary to enable these growing application trends.

Microsemi claims that its next-generation 1200V, 25/40/80mΩ SiC MOSFET devices and die as well as its next-generation 1200V and 700V SiC SBD devices offer benefits compared with competing silicon/SiC diode/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche/UIS rating and higher short-circuit withstand rating for rugged and reliable operation. For example, SiC MOSFETs are developed with a balance of specific on-resistance, low gate and thermal resistances, and low gate threshold voltage and capacitance for reliable operation. Designed for high-yield processes and low parameter variation across temperature, they operate at higher efficiency (compared with Si and IGBT solutions) across high junction temperature (175°C) to extend battery systems like those in HEV/EV applications.

The new devices being sampled also offer what is claimed to be excellent gate integrity and high gate yield, as verified through high-temperature reverse bias (HTRB) and time-dependent dielectric breakdown (TBBD) tests, which are part of its AEC-Q101 qualification in progress. Other key features include:

  • high UIS capability, 1.5-2x higher than competing SiC MOSFETs and gallium nitride (GaN) devices for avalanche ruggedness;
  • high short-circuit rating 1.5-5x higher than competing SiC MOSFET devices for more rugged operation;
  • up to 10x lower failure-in-time (FIT) rate than comparable Si IGBTs at rated voltage for neutron susceptibility and with comparable performance against SiC competition pertaining to neutron irradiation; and
  • higher SiC power density versus silicon, enabling smaller magnetics/transformers/DC bus capacitors and less cooling elements for more compact form factor to lower overall system costs.

At PCIM Europe 2018, Microsemi is demonstrating its next-generation SiC solutions, and in particular its recently announced next-generation 1200V, 40mΩ SiC MOSFET device and 1200V, 10/30/50A SiC diode products. The 1200V SiC MOSFET devices and die as well as the firm’s 1200V and 700V SiC SBDs are sampling now.

See related items:

Microsemi samples new 1200V SiC MOSFETs and SiC SBDs for industrial and automotive markets

Microsemi launches 1200V SiC MOSFETs for high-voltage industrial applications

Tags: Microsemi SiC MOSFET SiC Schottky barrier diodes

Visit: www.mesago.de/en/PCIM/main.htm

Visit: www.microsemi.com/product-directory/discretes/3613-silicon-carbide-sic

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