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13 November 2018

EpiGaN orders Aixtron AIX G5+C MOCVD system to expand large-diameter GaN-on-Si and GaN-on-SiC epi production

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

EpiGaN nv of Hasselt, near Antwerp, Belgium has ordered an AIX G5+C metal-organic chemical vapor deposition (MOCVD) system from deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany to boost its manufacturing capability of large-diameter gallium nitride on silicon (GaN-on-Si) and gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers for telecom, power electronics and sensor applications.

To be installed and operational in first-quarter 2019, the fully automated Planetary MOCVD system features in-situ chamber cleaning and enables configurations of 8x6 inch or 5x8-inch epiwafers to be automatically loaded and removed by a cassette-to-cassette wafer transfer module.

“The demand from our global customer base for GaN product solutions is booming. Our key customers are getting ready to launch and scale-up products based on our GaN RF-power technology, which is optimized for 5G broadband network applications,” says EpiGaN’s co-founder & CEO Dr Marianne Germain. “With Aixtron’s AIX G5+C Planetary system, EpiGaN will increase its capacity for 150mm and 200mm product solutions to cope with these increasing market demands,” she adds. “Aixtron’s Planetary system combines excellent on-wafer uniformity and run-to-run performance at the lowest cost of ownership – these attributes are critical to serve our customer base with products of exceptional performance and at the right price point,” Germain comments.

“The AIX G5+C will support EpiGaN’s demanding requirements for high-quality, cost-effective production of GaN epitaxial wafers as our tool meets the highest standards in terms of uniformity and particle density,” says Aixtron’s president Dr Felix Grawert.

EpiGaN recently released large-diameter versions of its HVRF (high-voltage radio frequency) GaN-on-Si as well as GaN-on-SiC wafer product families tailored to demanding 5G applications needs. With the new AIX G5+C MOCVD system, the firm expects to quickly scale up and spread its technology solutions to the global market.

See related items:

EpiGaN showcasing GaN epiwafer solutions for 5G

EpiGaN showcasing 200mm GaN-on-Si epiwafers for 650V power switching and RF power

Tags: Aixtron MOCVD EpiGaN GaN-on-Si GaN-on-SiC

Visit: www.aixtron.com

Visit: www.epigan.com

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