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18 October 2018

Exagan forms Taiwan subsidiary

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Gallium nitride technology start-up Exagan of Grenoble and Toulouse, France (founded in 2014 with support from CEA-Leti and Soitec) has established the subsidiary Exagan Taiwan Ltd with a new sales and applications center in Taiwan – the firm’s first step in its global market deployment – to accelerate the development and use of fast, intelligent GaN power solutions in the region.

The facility in Taipei’s Nankang Software Park was officially opened during ceremonies attended by Exagan’s president & CEO Frédéric Dupont, chief operating officer Fabrice Letertre and Asia sales director Ralf Kilguss, who is heading up regional sales in Asia (leveraging his 20 years of experience in the semiconductor and power electronics markets).

“With this new application center, our company experts will be able to work closely with local customers on evaluating and designing GaN-based solutions while speeding the technology’s adoption in the rapidly growing charger and server sectors, which are being driven by a very dynamic Asian market,” says Dupont.

Since 2014, Exagan has developed multiple partnerships in Asia to support its product design, development and manufacturing, establishing a robust supply chain with proven solutions for the targeted markets.

Earlier this year, the firm launched its G-FET power transistors and G-DRIVE intelligent and fast-switching solution featuring an integrated driver and transistor in a single package. These are designed for easy system implementation in applications including servers and USB chargers.

The number of devices with at least one USB type C port for the simultaneous transfer of electrical power, data and video is forecasted to grow to nearly 5 billion units by 2021, according to market research firm IHS Markit, while total server shipments will expand at a compound annual growth rate (CAGR) of 14% over 2018-2023, forecast Digitimes Research.

See related items:

Exagan launches G-FET power transistors and G-DRIVE intelligent fast-switching products for consumer, industrial and automotive applications

Exagan raises €5.7m to produce GaN-on-Si power-switching devices on 200mm wafers

X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

Tags: GaN-on-Si GaN switching device on silicon

Visit: www.exagan.com

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