ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


15 October 2018

Saab awarded contract to develop prototype GaN-based X-band active aperture array radar for US Navy

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

The US Naval Air Systems Command’s Naval Air Warfare Center Aircraft Division (NAWCAD) Lakehurst has awarded a firm-fixed-price contract (N68335-18-C-0693) to Saab Defense and Security USA LLC of East Syracuse, NY, USA (part of Sweden-based defence and security company Saab AB) for the research and development of a prototype gallium nitride (GaN)-based X-band active aperture array radar in support of the US Office of Naval Research (ONR) for evaluation under the Office of the Secretary of Defense (OSD) Foreign Comparative Test (FCT) program.

Work will be performed in Gothenburg, Sweden (80%) and East Syracuse (20%) and is expected to be completed in June 2020.

Fiscal year 2017 and 2018 research, development, test and evaluation (Navy and Defense) funds of $8,184,781 will be obligated at the time of award ($1,000,000 of which will expire at the end of the current fiscal year). If all options are exercised, the contract could last up to 30 months, with the award rising to $13,456,683.

See related items:

Saab using GaN-based AESA in new Arexis electronic warfare jammer pod for Gripen fighter aircraft

Saab offers GaN-based AESA radar for India's Tejas LCA fighter aircraft

Tags: GaN MMIC Radar

Visit: www.saab.com

See Latest IssueRSS Feed