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24 September 2018

Littelfuse launches its first 1700V SiC MOSFETs

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Littelfuse Inc of Chicago, IL, USA, which provides circuit protection technologies (including fuses, semiconductors, polymers, ceramics, relays and sensors), has expanding its portfolio of silicon carbide (SiC) MOSFETs by launching its first 1700V device.

The LSIC1MO170E1000 adds to the firm’s 1200V SiC MOSFETs and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership, says the firm.

High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles (EV/HEV), data centers, and auxiliary power supplies, says Littelfuse. Compared with similarly rated silicon insulated-gate bipolar transistors (IGBTs), the LSIC1MO170E1000 SiC MOSFET enables system-level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system-level costs, adds the firm.

Also, the SiC MOSFETs deliver on-par or better performance in all aspects compared head-to-head with other industry-leading SiC MOSFET devices on the market, it is claimed. Typical applications for the LSIC1MO170E1000 include: solar inverters; switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS); motor drives; high-voltage DC/DC converters; and induction heating.

“This product can improve existing applications, and the Littelfuse application support network can help new design-in projects,” says Michael Ketterer, global product marketing manager, Power Semiconductors, of Littelfuse’s Semiconductor business unit. “SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs,” he adds. “Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on-resistance, and junction capacitances.”

The new 1700V, 1Ω SiC MOSFETs offer the following benefits, it is claimed:

  • optimized for high-frequency, high-efficiency applications;
  • extremely low gate charge and output capacitance; and
  • low gate resistance for high-frequency switching.

LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Sample requests can be placed through authorized Littelfuse distributors worldwide.

See related items:

Littelfuse launches 1200V SiC MOSFETs with 120mΩ and 160mΩ on-resistance at APEC


Visit: www.littelfuse.com

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