ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter


1 April 2019

Arralis launches 10W GaN-SiC MMIC high-power amplifier for K-band SatComs

Arralis Ltd of Limerick, Ireland - which has a design center in Belfast and manufactures RF, microwave and millimeter-wave devices, modules and antennas up to and beyond 110GHz (the W-band) for aerospace/satellite and security markets - has launched the Leonis series GaN-SiC (gallium nitride on silicon carbide) high-power amplifier (HPA) optimized for satellite downlink communication systems (available as a bare die MMIC or in a preassembled evaluation board).

Operating at 17.5-20GHz in the K-band and delivers a saturated power in excess of 10W with typical power-added efficiency (PAE) of 25% and large-signal gain of 20dB in a compact die size of 3.6mm x 2.9mm, the HPA is matched to 50Ω with integrated DC blocking capacitors on RF ports and incorporates an output power detector to assist with system integration. Nominal drain bias is 25V.

The HPA is fabricated on the ITAR-free, space-qualified 0.25μm GH25-10 GaN-SiC process of United Monolithic Semiconductors (UMS). GaN devices have higher efficiencies, power density and thermal conductivity compared with equivalent GaAs parts, and can operate at higher temperatures without loss of reliability. Optimum performance has been achieved in the K-band through a combination of UMS device models, NI AWR electronic design automation (EDA) software and the Arralis monolithic microwave integrated circuit (MMIC) team’s design expertise.

“The addition of this latest HPA to Arralis’ suite of devices builds on our high-performance K/Ka-band Leonis chipset, forming the final link in the RF power chain and delivering 10W of saturated output power in a compact GaN MMIC,” says senior MMIC design engineer Thomas Young. “The new GaN HPA exemplifies the design and application expertise that Arralis provides across a range of mm-wave bands,” he adds. “The data-hungry society of today demands constant, uninterrupted access to information, and this demand will increase in the future. Global connectivity takes a step closer to realisation through the development of this enabling technology for K/Ka-band satellite comms”.

The Leonis chipset was developed to meet growing demand for low-cost K/Ka-band satellite equipment that is simple to interface with existing digital internet hardware. Applications include 5G communications, airborne high-speed Wi-Fi, low-earth-orbit mega constellation communications, drone constellations and SAT-Drone-Ground data networks, satellite to automotive connectivity, connected vehicles, last-mile and remote internet solutions, IoT and M2M communications.

Arralis is showcasing the new device in booth D30 at Paris Space Week 2019 in Paris-Le Bourget, France (2-3 April).

See related items:

Tyndall and Arralis sign €400,000 deal to develop high-volume manufacturing process for scaling mmWave integration and packaging technologies

Arralis launches new W-band MMICs

Arralis releases first 94GHz transmit and receive core chips

Tags: GaN-on-SiC

Visit:  www.arralis.com

See Latest IssueRSS Feed