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30 April 2019

Microchip announces production release of 700V MOSFETs and 700V and 1200V Schottky barrier diodes

Microcontroller, mixed-signal, analog and Flash-IP solution provider Microchip Technology Inc of Chandler, AZ, USA has (via its Microsemi subsidiary) has announced the production release of a family of silicon carbide (SiC) power devices offering proven ruggedness and the performance benefits of wide-bandgap technology. Complemented by Microchip’s broad range of microcontrollers (MCUs) and analog solutions, the SiC devices join a growing family of reliable SiC products that meet the needs of electric vehicles (EVs) and other high-power applications in fast-growing markets.

The new 700V SiC MOSFETs and 700V and 1200V SiC Schottky barrier diodes (SBDs) join Microchip’s existing portfolio of SiC power modules. The more than 35 discrete products that Microchip has added to its portfolio are available in volume, supported by comprehensive development services, tools and reference designs, and offer ruggedness proven through rigorous testing. Microchip now offers a broad family of SiC die, discretes and power modules across a range of voltage, current ratings and package types.

“SiC technology’s accelerated evolution and adoption has begun, and Microchip offers both a long heritage in this market and the ongoing commitment to playing a leadership role in ensuring that global supply continues to meet growing demand for these products,” says Rich Simoncic, senior VP of Microchip’s Discrete and Power Management business unit. “We are building out our portfolio with reliable products that are backed by the strong support infrastructure and supply chain that our customers need to execute and scale their development programs,” he adds.

Microchip says that its SiC MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability. The SiC SBDs are said to perform about 20% better than other SiC diodes in such unclamped inductive switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage. The SiC MOSFETs are also said to outperform alternatives in these ruggedness tests, demonstrating what is claimed to be excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of repetitive UIS (RUIS) testing.

Microchip is one of the few suppliers to provide a range of both silicon and SiC discrete and module solutions. Its products are suitable for the growing number of EV systems including external charging stations, onboard chargers, DC-DC converters and powertrain/traction control solutions. The new SiC devices are backed by Microchip’s customer-driven obsolescence practice, which ensures devices will continue to be produced for as long as customers need them.

The expanded SiC portfolio is supported by a range of SiC SPICE models, SiC driver board reference designs and a power factor correction (PFC) Vienna reference design. All the firm’s SiC products are available in production volumes along with their associated support offerings. A variety of die and package options are available for the SiC MOSFETs and SiC diodes.

See related items:

Microchip acquiring Microsemi for $8.35bn

Tags: Microsemi

Visit:  www.microchip.com

Visit:  www.microsemi.com

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