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24 April 2019

Transphorm highlights high-voltage GaN application development at PCIM 2019

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage (HV) gallium nitride (GaN) field-effect transistors (FETs) for high-voltage (HV) power conversion applications — says that in booth 519 (hall 9) at PCIM Europe 2019 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (7-9 May) it is highlighting three key aspects of its high-voltage GaN: reliability, drivability, and simplicity.

“At PCIM, you’ll see the culmination of Transphorm’s innovation along with its measurable impact on low-volume as well as high-volume customer applications,” says Philip Zuk, VP, technical marketing worldwide. “We’ve worked hard to produce GaN transistors that are high-performing, highly reliable and easy to use. Which led to Transphorm’s GaN devices shipping in multiple customer products. Which then led to us collecting more than 3 billion hours of field reliability data to validate our GaN’s quality and reliability.”

Specifically, at PCIM Europe Transphorm is displaying evaluation boards and reference designs including: a 2kW DC-to-DC hard-switched half bridge; a 1.2kW DC-to-DC LLC converter; and a 3.3kW bridgeless totem-pole PFC reference design (an effective platform for designing high-efficiency DSP-based PFC converters).

The firm adds that in-production customer use cases demonstrate the quantitative and qualitative impact of its GaN platform within various end applications from rugged broad industrial power supplies to high-volume battery charging solutions.

See related items:

Transphorm releases quality and reliability data behind device shipment numbers

Transphorm’s new Gen III GaN power conversion platform increases noise immunity and reduces switching noise

Transphorm announces first automotive-qualified GaN FETs

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics

Visit:  www.mesago.de/en/PCIM/main.htm

Visit:  www.transphormusa.com

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