Temescal

ARM Purification

CLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIACLICK HERE: free registration for Semiconductor Today and Semiconductor Today ASIA

Join our LinkedIn group!

Follow ST on Twitter

IQE

1 August 2019

UnitedSiC adds two 650V SiC FET packages to UF3C FAST Series

Silicon carbide (SiC) power semiconductor maker United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC field-effect transistors (FETs).

The new products offer on-resistance (RDS(on)) of 30mΩ (UF3C065030T3S) and 80mΩ (UF3C065080T3S). The three-leaded, industry-standard TO220-3L package features enhanced thermal characteristics made possible by a sintered-silver packaging technology developed by UnitedSiC.

The new devices are targeted at designers seeking more powerful performance in a 3-lead TO220 package option for applications such as electric vehicle (EV) charging, solar photovoltaic (PV) inverters, switch mode power supplies (SMPS), power factor correction (PFC) modules, motor drives and induction heating.

Both new SiC FET products are based on a unique UnitedSiC cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a silicon MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows a true ‘drop-in replacement’ to silicon IGBTs (insulated-gate bipolar transistors), silicon FETs, SiC MOSFETs or silicon superjunction devices on existing designs in which designers can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection.

UnitedSiC says that, in the case of new designs, its FETs deliver increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size, and cost of passive components, such as magnetics and capacitors. The FAST Series devices are said to offer not only ultra-low gate charge but also the best reverse recovery characteristics of any device of similar ratings. The devices are suitable for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.

The UF3C FAST SiC series (which now totals 14 devices) is available in a range of TO247-3L, TO247-4L, TO220-3L and D2PAK7-3L packages, with four 1200V and ten 650V options.

Prices are $5.18 for the UF3C065080T3S and $13.79 for the UF3C065030T3S, each in 1000-unit quantities. Stock is available from global distribution partners Mouser and Richardson Electronics, as well as other local distributors.

See related items:

UnitedSiC adds 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC launches UF3C FAST silicon carbide FET series

Tags: SiC JFETs SiC power devices

Visit: https://unitedsic.com/cascodes

Share/Save/Bookmark
See Latest IssueRSS Feed

EVG