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18 December 2019

Teledyne e2v and GaN Systems unveil high-reliability 650V GaN power HEMT

Teledyne e2v HiRel of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) is launching a ruggedized 650V/60A gallium nitride power high-electron-mobility transistor (HEMT) based on technology from GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications).

Picture: The new ruggedized 650V GaN power HEMT from Teledyne e2v HiRel, the highest-voltage GaN power device on the market for military and space applications.

The new TDG650E60 GaN power HEMT is claimed to be the highest-voltage GaN power device on the market for hi-rel military and space applications, and is now available with both top- or bottom-side-cooled options.

Gallium nitride devices have revolutionized power conversion in other industries and are now available in radiation-tolerant, plastic-encapsulated packaging that has undergone stringent reliability and electrical testing to ensure mission critical success. The launch of the TDG650E60 GaN HEMT finally delivers the efficiency, size and power-density benefits required in critical aerospace and defense power applications, says Teledyne e2v HiRel.

For all product lines, the firm performs demanding qualification and testing tailored to the highest-reliability applications. This regime includes sulfuric test, high-altitude simulation, dynamic burn-in, step stress up to 175°C ambient, 9V gate voltage, and full temperature testing.

Teledyne says that its TDG650E60 GaN power HEMT has an extremely small form factor and leverages patented Island Technology from GaN Systems. This technology is a scalable, vertical charge dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds.

Unlike silicon carbide (SiC) devices, the GaN-based TDG650E60 can easily be implemented in parallel to increase the load current or lower the effective on-resistance (RDSon). The use of exclusive GaNpx packaging allows very high-frequency switching and excellent thermal characteristics, enabling a significant reduction in the size and weight of power electronics, it is said.

“Teledyne e2v has a proud heritage of space products, and we are now bringing the unprecedented efficiency of GaN power to our customers,” says Mont Taylor, VP of business development for Teledyne e2v HiRel. “These devices enable design engineers to create highly efficient, small power supplies and motor controllers which can comfortably function in high-radiation environments such as space.”

Qualified TDG650E60 devices with either top-side or bottom-side cooling are now shipping and available for immediate purchase.

See related items:

e2v to supply GaN Systems' 100V and 650V hi-rel GaN transistors to global aerospace & defense industry

Tags: GaN Systems E-mode GaN FETs Power electronics

Visit: www.gansystems.com

Visit: www.e2v.com/products/semiconductors/power-solutions

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