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8 January 2019

Cree and ST sign multi-year SiC wafer supply agreement

Cree Inc of Durham, NC, USA has signed a multi-year agreement to produce and supply its Wolfspeed silicon carbide (SiC) wafers to STMicroelectronics of Geneva, Switzerland. Enabling silicon carbide applications in the broad automotive and industrial markets, the agreement governs the supply of a quarter billion dollars of Cree’s 150mm silicon carbide bare and epitaxial wafers to STMicroelectronics during the current period of growth and demand for silicon carbide power devices.

“ST is the only semiconductor company with automotive-grade silicon carbide in mass production today, and we want to press forward to grow our SiC business both in terms of volume and breadth of applications served, targeting leadership in a market estimated at more than $3bn in 2025,” says STMicroelectronics’ president & CEO Jean-Marc Chery. “This agreement with Cree will improve our flexibility, sustain our ambition and plans, and contribute to boosting the pervasion of SiC in automotive and industrial applications,” he reckons.

“We remain focused on increasing the adoption of silicon carbide-based solutions, and this agreement is a testament to our mission,” says Cree’s CEO Gregg Lowe. “This is the third multi-year agreement that we have signed this past year in support of the industry’s transition from silicon to silicon carbide,” he adds. “As the world leader in silicon carbide, Cree continues to expand capacity to meet the growing market needs, particularly in industrial and automotive applications.”

See related items:

Cree signs long-term SiC wafer supply deal with leading power device maker

Cree signs $100m long-term deal to supply 150mm SiC wafers to Infineon

Tags:  Wolfspeed Cree SiC Power electronics STMicroelectronics

Visit:  www.wolfspeed.com

Visit:  www.cree.com

Visit:  www.st.com

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