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12 July 2019

III-V Components awarded patent for MTZ-Block multi-temperature substrate holder

III-V Components of Santa Barbara, CA, USA – which provides components and services for compound semiconductor manufacturing including effusion cells, substrate heaters and component rebuilding services – has recently been awarded a patent by the United States Patent and Trademark Office (USPTO) for its MTZ-Block multi-temperature substrate holder, which provides what is said to be up to a 10x increase in throughout for any 3”-wafer molecular beam epitaxy (MBE) system.

Currently in use by leading universities, research laboratories and semiconductor fab operations, III-V Components says that the MTZ-Block is proven to hold consistent and highly accurate temperature differentials across multiple partial substrates grown simultaneously inside an MBE reactor. With adjustable heat-shielding used to control the temperature within each zone of the MTZ-Block, the resulting temperature of each substrate is calibrated to the existing substrate heater thermocouple reading. Along with the slim profile of the MTZ-Block and with multiple sizes and configurations available, the complete assembly installs into any deposition system, just like a standard semiconductor substrate/wafer, with absolutely no system modifications necessary, the firm says.

III-V Components adds that the MTZ-Block is particularly well suited to temperature-dependent materials research, temperature calibrations or even multiple growths at identical temperatures to improve the throughput and efficiency of compound semiconductor manufacturing and materials science research. Aside from the significant cost and time savings offered, the MTZ-Block greatly improves quality or results by eliminating unwanted variables typically seen between substrates grown separately, such as variable deposition rates and growth chamber pressures.

Options are available for a wide range of applications, materials and deposition systems with a capacity for 2” wafers or greater and growth temperatures of 200-1400°C+ with an adjustable temperature differential of 5-100°C+ depending on the configuration.

Tags: MBE

Visit: www.iii-vcomponents.com

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